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DOINGTER UC004NG-B

Manufacturer
DOINGTERAsian Brands
MPN
UC004NG-B
LCSC Part #
C53373805
Packaging
TO-251
Customer #
Key Attributes
30V 100A 1.6V 74W 3.3mΩ@10V 1 N-channel N-Channel TO-251 Single FETs, MOSFETs
DatasheetDOINGTER UC004NG-B
Alternative Parts1
In-Stock: 200
200 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1357$ 0.68
50+$ 0.1093$ 5.47
150+$ 0.0961$ 14.42
525+$ 0.0862$ 45.26
2,475+$ 0.0783$ 193.79
5,025+$ 0.0743$ 373.36
Standard Packaging75/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-251
Operating Temperature-50℃~+150℃
Drain to Source Voltage30V
Output Capacitance(Coss)289pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)243pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF
Gate Charge(Qg)10.5nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design, delivering excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 30V, ID = 100A, RDS(ON) < 4mΩ (typical 3.3mΩ at VGS = 10V)
  • Low gate charge
  • Eco-friendly device options available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package design with superior thermal dissipation

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
DOU100N03DOINGTERTO-2512,840$0.1239 $0.1346