Infineon AUIRLR3636TRL
| Manufacturer | |
| MPN | AUIRLR3636TRL |
| LCSC Part # | C533481 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 143W 60V 50A 6.8mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS |
| Datasheet | Infineon AUIRLR3636TRL |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 332pF | |
| Ciss-Input Capacitance | 3.779nF | |
| Pd - Power Dissipation | 143W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 163pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 332pF | |
| Ciss-Input Capacitance | 3.779nF | |
| Pd - Power Dissipation | 143W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 163pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest process technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide range of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 332pF | |
| Ciss-Input Capacitance | 3.779nF | |
| Pd - Power Dissipation | 143W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 163pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 332pF | |
| Ciss-Input Capacitance | 3.779nF | |
| Pd - Power Dissipation | 143W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 163pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@4.5V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest process technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide range of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533481 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IRLR3636TRPBF | Infineon | Similar | TO-252 | 5,588 | $ 1.2931 | ||
| IRLR3636TRLPBF | Infineon | Similar | DPAK | 20 | $ 1.9577 | ||
| IRLR3636TRPBF | Infineon | Similar | DPAK | 6 | $ 5.9007 | ||
| IRLR3110ZTRLPBF | Infineon | Similar | DPAK(TO-252AA) | 2 | $ 4.1345 | ||
| IRLR3110ZTRPBF | Infineon | Similar | TO-252 | 1,932 | $ 1.0232 |