Infineon AUIRFR3806TRL
| Manufacturer | |
| MPN | AUIRFR3806TRL |
| LCSC Part # | C533337 |
| Packaging | DPAK(TO-252AA) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 43A DPAK(TO-252AA) |
| Datasheet | Infineon AUIRFR3806TRL |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Output Capacitance(Coss) | 130pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 71W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 12.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Output Capacitance(Coss) | 130pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 71W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 12.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Output Capacitance(Coss) | 130pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 71W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 12.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Output Capacitance(Coss) | 130pF | |
| Ciss-Input Capacitance | 1.15nF | |
| Pd - Power Dissipation | 71W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 12.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
C533337 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



