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Infineon AUIRFR3504Z
| Manufacturer | |
| MPN | AUIRFR3504Z |
| LCSC Part # | C533330 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 40V 77A 4V 90W 9mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs |
| Datasheet | Infineon AUIRFR3504Z |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 77A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 45nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 77A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 45nC@10V |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive applications and a wide variety of other applications.
Features
- Advanced process technology
- Low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- Automotive qualified
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9795 | $ 0.98 |
| 10+ | $ 0.9565 | $ 9.57 |
| 30+ | $ 0.9427 | $ 28.28 |
| 100+ | $ 0.9274 | $ 92.74 |
Standard Packaging3000/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 77A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 45nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 77A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 45nC@10V |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive applications and a wide variety of other applications.
Features
- Advanced process technology
- Low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- Automotive qualified
C533330 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| LWN4011A4 | Lewa Micro | TO-252 | 2,490 | $ 0.2755 | ||
| FH1806D2 | XIN FEI HONG | TO-252 | 690 | $ 0.1763 | ||
| CRTD082NE6N | CRMICRO | TO-252 | 1,925 | $ 0.2539 | ||
| CMD060N10 | Cmos | TO-252 | 195 | $0.6096 $0.6416 | ||
| STD65N55F3 | ST | DPAK | 7 | $ 2.0784 | ||
| KND3306B | KIA Semicon Tech | TO-252 | 0 | $ 0.6434 | ||
| RD3P07BBHTL1 | ROHM | TO-252 | 0 | $ 3.6798 | ||
| DMTH4005SK3-13 | DIODES | TO-252(DPAK) | 0 | $ 1.0577 | ||
| IPD80N04S3-06 | Infineon | TO-252 | 0 | $ 0.5866 | ||
| AGMH70N70D | AGMSEMI | TO-252 | 0 | $ 0.3447 |