Infineon AUIRFN8459TR
| Manufacturer | |
| MPN | AUIRFN8459TR |
| LCSC Part # | C533310 |
| Packaging | PQFN-8(5.8x4.9) |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V PQFN-8(5.8x4.9) |
| Datasheet | Infineon AUIRFN8459TR |
| RoHS Compliance | 1 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.25nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 215pF | |
| RDS(on) | 5.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.25nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 215pF | |
| RDS(on) | 5.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Introduction
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Features
- Advanced Process Technology
- Dual N-Channel MOSFET
- Ultra Low On-Resistance
- 175℃ Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Automotive Qualified
Applications
- 12V Automotive Systems
- Brushed DC Motor
- Braking Transmission
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.25nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 215pF | |
| RDS(on) | 5.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | PQFN-8(5.8x4.9) | |
| Output Capacitance(Coss) | 340pF | |
| Ciss-Input Capacitance | 2.25nF | |
| Pd - Power Dissipation | 50W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 215pF | |
| RDS(on) | 5.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Introduction
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Features
- Advanced Process Technology
- Dual N-Channel MOSFET
- Ultra Low On-Resistance
- 175℃ Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Automotive Qualified
Applications
- 12V Automotive Systems
- Brushed DC Motor
- Braking Transmission
C533310 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



