Wuxi Maxinmicro MX5050TL10R17

MX5050TL10R17 is a power module integrating an ideal diode controller and a 100V 260A MOSFET, designed to replace conventional Schottky diodes. Schottky diodes are widely used in power system designs to provide protection against various input power fault conditions and system redundancy through paralleled power supplies. Automotive power systems employ power Schottky diodes for protection against battery reversal and various automotive electrical transients. Industrial systems have traditionally used Schottky diodes for reverse polarity protection against field wiring errors, as well as immunity against lightning strikes and industrial surges. Common industrial systems, telecom servers, storage, and infrastructure equipment use Schottky diodes to provide system redundancy or increase power capacity by implementing ORing circuits across two or more power supplies. However, the forward voltage drop of Schottky diodes causes significant power dissipation at high currents, requiring heatsinks and larger PCB footprints for thermal management, reducing efficiency and increasing system cost and board space. As system power levels rise and power density requirements increase, Schottky diodes are no longer the preferred choice for next-generation high-performance system designs.

This module is capable of replacing high-power 30~100A, 100V Schottky diodes with a smaller footprint, higher reliability, lower voltage drop, reduced power dissipation, and faster reverse blocking response, improving efficiency and performance in power ORing applications.

The MX5050TL10R17 high-side OR-ing module is a power module comprising an integrated 100V ideal diode controller and a 100V 1.7mΩ N-MOSFET, housed in a compact TOLL package. When connected in series with a power supply, it functions as an ideal diode rectifier.

The MX5050TL10R17 can be connected to power supplies ranging from 5V to 90V and can withstand transient voltages up to 100V.

The MX5050TL10R17 high-side OR-ing module integrates an N-MOSFET that acts as an ideal diode rectifier when connected in series with a power supply. The OR-ing module enables the internal MOSFET to replace diode rectifiers in power distribution networks, reducing power loss and voltage drop.

The MX5050TL10R17 provides charge pump gate drive for the internal N-channel MOSFET and incorporates a fast-response comparator that turns off the FET when current flows in the reverse direction. The MX5050TL10R17 can be connected to power supplies ranging from 5V to 90V and can withstand transient voltages up to 100V.

• Wide voltage input 5V~90V
• Integrated internal 100V 260A NMOSFET
• Ultra-low VDS for fast reverse current turn-off
• Semiconductor package structure, high reliability
• Wide operating input voltage range VIN: 5V to 90V
• Integrated 100V 260A NMOS
• Charge pump gate driver for internal N-channel MOSFET
• Ultra-low VDS turn-off voltage reduces turn-off time
• TOLL-8 package

• Multiple battery pack parallel connection
• Power tools
• E-bikes / electric-assisted bicycles
• Photovoltaic energy storage
• Server redundant power supply
• Active OR-ing for redundant (N+1) power supplies
• Single-channel reverse current prevention
• Dual-channel redundancy applications