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DOINGTER DD013PG
| Manufacturer | DOINGTERAsian Brands |
| MPN | DD013PG |
| LCSC Part # | C53281967 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 40V 55A 1.6V 40W 9.5mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs |
| Datasheet | DOINGTER DD013PG |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 9.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| RDS(on) | 9.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET employs advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -40V, ID = -55A, RDS(ON) < 13mΩ @ VGS = -10V (typical: 9.5mΩ)
- Low gate charge.
- RoHS compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with good thermal dissipation performance.
- MSL3.
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In-Stock: 455
455 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1851 | $ 0.93 |
| 50+ | $ 0.1475 | $ 7.38 |
| 150+ | $ 0.1314 | $ 19.71 |
| 500+ | $ 0.1113 | $ 55.65 |
| 2,500+ | $ 0.1024 | $ 256.00 |
| 5,000+ | $ 0.097 | $ 485.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 40W | |
| RDS(on) | 9.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| RDS(on) | 9.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.1nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET employs advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -40V, ID = -55A, RDS(ON) < 13mΩ @ VGS = -10V (typical: 9.5mΩ)
- Low gate charge.
- RoHS compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with good thermal dissipation performance.
- MSL3.
C53281967 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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