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HXY MOSFET BSZ058N03MSGATMA1-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | BSZ058N03MSGATMA1-HXY |
| LCSC Part # | C53263080 |
| Packaging | DFN-8L(5x6) |
| Customer # | |
| Key Attributes | 30W 30V 60A 2.5V 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |  HXY MOSFET BSZ058N03MSGATMA1-HXY |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 498pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 4.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 814pF | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
In-Stock: 99
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5617$ 0.4494 | $ 0.45 |
| 10+ | $ 0.4459$ 0.3568 | $ 3.57 |
| 30+ | $ 0.3951$ 0.3161 | $ 9.48 |
| 100+ | $ 0.3332$ 0.2666 | $ 26.66 |
| 500+ | $ 0.3047$ 0.2438 | $ 121.90 |
| 1,000+ | $ 0.2888$ 0.2311 | $ 231.10 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 498pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 4.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 814pF | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |