HXY MOSFET IPD70N03S4L04ATMA1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPD70N03S4L04ATMA1-HXY
LCSC Part #	C53263014
Packaging	TO-252-2L
Customer #
Key Attributes	53W 30V 100A 1.5V 3.8mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPD70N03S4L04ATMA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	53W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	210pF
RDS(on)	3.8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel

In-Stock: 49

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Qty	Unit Price	Total Amount
1+	$ 0.6727$ 0.5382	$ 0.54
10+	$ 0.5458$ 0.4367	$ 4.37
30+	$ 0.4824$ 0.3860	$ 11.58
100+	$ 0.4189$ 0.3352	$ 33.52
500+	$ 0.3824$ 0.3060	$ 153.00
1,000+	$ 0.3618$ 0.2895	$ 289.50
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Output Capacitance(Coss)	267pF
Pd - Power Dissipation	53W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	100A
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	1.5V
Reverse Transfer Capacitance (Crss@Vds)	210pF
RDS(on)	3.8mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.295nF
Gate Charge(Qg)	20nC
Vgs	±20V
Type	N-Channel