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HXY MOSFET IPD70N03S4L04ATMA1-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IPD70N03S4L04ATMA1-HXY |
| LCSC Part # | C53263014 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | 53W 30V 100A 3.8mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs |
| Datasheet | HXY MOSFET IPD70N03S4L04ATMA1-HXY |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 267pF | |
| Ciss-Input Capacitance | 2.295nF | |
| Pd - Power Dissipation | 53W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 267pF | |
| Ciss-Input Capacitance | 2.295nF | |
| Pd - Power Dissipation | 53W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 267pF | |
| Ciss-Input Capacitance | 2.295nF | |
| Pd - Power Dissipation | 53W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 267pF | |
| Ciss-Input Capacitance | 2.295nF | |
| Pd - Power Dissipation | 53W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 210pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
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C53263014 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |