HXY MOSFET IPP045N10N3GXKSA1-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	IPP045N10N3GXKSA1-HXY
LCSC Part #	C53262898
Packaging	TO-220C
Customer #
Key Attributes	178W 100V 120A 3V 4.1mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS
Datasheet	HXY MOSFET IPP045N10N3GXKSA1-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	592pF
Pd - Power Dissipation	178W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
RDS(on)	4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	19.8pF
Number	1 N-channel
Input Capacitance(Ciss)	4.102nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel

In-Stock: 42

42 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.2907	$ 1.29
10+	$ 1.0693	$ 10.69
50+	$ 0.9473	$ 47.37
100+	$ 0.8089	$ 80.89
500+	$ 0.7487	$ 374.35
1,000+	$ 0.721	$ 721.00
Standard Packaging50/Full Tube

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220C
Output Capacitance(Coss)	592pF
Pd - Power Dissipation	178W
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
RDS(on)	4.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	19.8pF
Number	1 N-channel
Input Capacitance(Ciss)	4.102nF
Gate Charge(Qg)	69nC@10V
Vgs	±20V
Type	N-Channel