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HUASHUO HSS3400E

Manufacturer
HUASHUOAsian Brands
MPN
HSS3400E
LCSC Part #
C53243982
Packaging
SOT-23S
Customer #
Key Attributes
30V 5A 720mW 23mΩ@10V 1 N-channel N-Channel SOT-23S Single FETs, MOSFETs RoHS
DatasheetHUASHUO HSS3400E
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23S
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)58pF
Ciss-Input Capacitance726pF
Pd - Power Dissipation720mW
Reverse Transfer Capacitance (Crss)50pF
RDS(on)23mΩ@10V
Number1 N-channel
Gate Charge(Qg)15nC@4.5V
Gate Threshold Voltage (Vgs(th))1V
TypeN-Channel
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Introduction

AI Translation

HSS3400E is an N-channel MOSFET fabricated using a high cell density trench process, delivering excellent on-resistance and efficiency for most low-power switching and load switch applications. This product complies with RoHS and green product requirements, and has passed comprehensive functional reliability qualification.

Features

AI Translation
  • Green device options available
  • Ultra-low gate charge
  • ESD rating: >2KV HBM
  • Advanced high cell-density trench technology