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ElecSuper T2N7002BK,LM(ES)RoHS

Manufacturer
ElecSuperAsian Brands
MPN
T2N7002BK,LM(ES)
LCSC Part #
C53199055
Packaging
SOT-23
Customer #
Key Attributes
350mW 60V 300mA 1.6V 1.85Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconElecSuper T2N7002BK,LM(ES)
In-Stock: 5,800
5,800 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0183$ 0.92
500+$ 0.0144$ 7.20
3,000+$ 0.0122$ 36.60
6,000+$ 0.0109$ 65.40
24,000+$ 0.0097$ 232.80
51,000+$ 0.0091$ 464.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Output Capacitance(Coss)11pF
Pd - Power Dissipation350mW
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)300mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)1.85Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)28pF
Gate Charge(Qg)1.8nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This device is an N-channel enhancement-mode MOSFET utilizing advanced trench process and design, delivering excellent on-resistance at low gate charge, suitable for DC-DC conversion, power switching, and charging circuits.

Features

AI Translation
  • 60V voltage rating, typical on-resistance RDS(ON) = 1.85Ω @ VGS = 10V, typical on-resistance RDS(ON) = 2.05Ω @ VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low on-resistance
  • ESD protection: Human Body Model 2kV
  • Halogen-free compliant materials
  • Reliable and robust
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion