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JSMSEMI PUMD3,115-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | PUMD3,115-JSM |
| LCSC Part # | C53113980 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 50V 60 100mA 385mW NPN+PNP 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | JSMSEMI PUMD3,115-JSM |
| RoHS Compliance | 4 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | - | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | - | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | - | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | - | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | - |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Introduction
BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace discrete devices and their external resistor bias networks. The BRT eliminates these discrete components by integrating them into a single device. In the PUMD3,115-JSM, two complementary BRT devices are packaged in an SOT-363 package, making it ideal for low-power SMT applications where board space is limited.
Features
- Simplified circuit design
- Reduced board space
- Reduced component count
- We declare that the materials of this product comply with RoHS requirements.
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | - | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | - | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | - | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | - | |
| Current - Collector(Ic) | 100mA | |
| Vce Saturation(VCE(sat)) | - |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Introduction
BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace discrete devices and their external resistor bias networks. The BRT eliminates these discrete components by integrating them into a single device. In the PUMD3,115-JSM, two complementary BRT devices are packaged in an SOT-363 package, making it ideal for low-power SMT applications where board space is limited.
Features
- Simplified circuit design
- Reduced board space
- Reduced component count
- We declare that the materials of this product comply with RoHS requirements.
C53113980 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |