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VBsemi Elec RSD046P05-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | RSD046P05-VB |
| LCSC Part # | C53063670 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 34W 60V 30A 61mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs |
| Datasheet | VBsemi Elec RSD046P05-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 34W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 34W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% unclamped inductive switching (UIS) tested
Applications
AI Translation
- Load switch
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 34W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 120pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 34W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% unclamped inductive switching (UIS) tested
Applications
AI Translation
- Load switch
C53063670 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |