UMW IRLML2060TR(UMW)
| Manufacturer | UMWAsian Brands |
| MPN | IRLML2060TR(UMW) |
| LCSC Part # | C5290367 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 60V 1.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 13pF | |
| Current - Continuous Drain(Id) | 1.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 356mΩ@10V;475mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 64pF | |
| Gate Charge(Qg) | 670pC |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRLML2060TR utilizes advanced trench technology to deliver superior R_DS(on) and low gate charge. The device is suitable for load switching or PWM applications.
Features
AI Translation
- Drain-source voltage V_DS = 60V
- On-resistance R_DS(on) < 330 mΩ at V_GS = 10V
- On-resistance R_DS(on) < 440 mΩ at V_GS = 4.5V
In-Stock: 6,400
6,400 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0421 | $ 0.42 |
| 100+ | $ 0.0334 | $ 3.34 |
| 300+ | $ 0.0291 | $ 8.73 |
| 3,000+ | $ 0.0247 | $ 74.10 |
| 6,000+ | $ 0.0221 | $ 132.60 |
| 9,000+ | $ 0.0208 | $ 187.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UMW | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 13pF | |
| Current - Continuous Drain(Id) | 1.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 356mΩ@10V;475mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 64pF | |
| Gate Charge(Qg) | 670pC |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
IRLML2060TR utilizes advanced trench technology to deliver superior R_DS(on) and low gate charge. The device is suitable for load switching or PWM applications.
Features
AI Translation
- Drain-source voltage V_DS = 60V
- On-resistance R_DS(on) < 330 mΩ at V_GS = 10V
- On-resistance R_DS(on) < 440 mΩ at V_GS = 4.5V
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
