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ST STPSC8TH13TI
| Manufacturer | |
| MPN | STPSC8TH13TI |
| LCSC Part # | C5268315 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | DIODE ARRAY SIC 650V 8A TO-220AB |
| Datasheet | ST STPSC8TH13TI |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 1 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | ST | |
| Packaging | TO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 75A | |
| Diode Configuration | 1 Pair Series Connection | |
| Current - Rectified | 8A | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 650V | |
| Voltage - Forward(Vf@If) | 1.75V@8A | |
| Reverse Leakage Current (Ir) | 80uA@650V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | ST | |
| Packaging | TO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 75A | |
| Diode Configuration | 1 Pair Series Connection |
| Type | Description | |
|---|---|---|
| Current - Rectified | 8A | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 650V | |
| Voltage - Forward(Vf@If) | 1.75V@8A | |
| Reverse Leakage Current (Ir) | 80uA@650V |
Introduction
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. The minimal capacitive turn - off behavior is independent of temperature. Especially suited for use in specific bridge - less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge - less topologies
- High forward surge capability
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
Applications
- Specific bridgeless topology
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 5.1138 | $ 5.11 |
| 10+ | $ 5.0015 | $ 50.02 |
| 50+ | $ 4.925 | $ 246.25 |
| 100+ | $ 4.8501 | $ 485.01 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | ST | |
| Packaging | TO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 75A | |
| Diode Configuration | 1 Pair Series Connection | |
| Current - Rectified | 8A | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 650V | |
| Voltage - Forward(Vf@If) | 1.75V@8A | |
| Reverse Leakage Current (Ir) | 80uA@650V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | ST | |
| Packaging | TO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 75A | |
| Diode Configuration | 1 Pair Series Connection |
| Type | Description | |
|---|---|---|
| Current - Rectified | 8A | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 650V | |
| Voltage - Forward(Vf@If) | 1.75V@8A | |
| Reverse Leakage Current (Ir) | 80uA@650V |
Introduction
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn - off and ringing patterns are negligible. The minimal capacitive turn - off behavior is independent of temperature. Especially suited for use in specific bridge - less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge - less topologies
- High forward surge capability
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
Applications
- Specific bridgeless topology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STPSC10TH13TI | ST | TO-220AB | 10 | $ 10.5826 |