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ST STPSC12065D

Manufacturer
ST
MPN
STPSC12065D
LCSC Part #
C5268309
Packaging
TO-220AC
Customer #
Key Attributes
1 Independent 650V 1.45V@12A 12A TO-220AC Single Diodes RoHS
DatasheetST STPSC12065D
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingTO-220AC
Diode Configuration1 Independent
Operating Junction Temperature Range-40℃~+175℃
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.45V@12A
Reverse Leakage Current (Ir)150uA@650V
Non-Repetitive Peak Forward Surge Current50A
Current - Rectified12A
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Introduction

AI Translation

This SiC diode is a high-performance power Schottky diode fabricated on a silicon carbide substrate. The wide bandgap material enables a Schottky diode structure rated at 650V. Due to the Schottky structure, there is no recovery phenomenon at turn-off and the ringing behavior is negligible. The minimal capacitive turn-off behavior is independent of temperature. In a D²PAK HV package, this diode is well suited for PFC applications, charging stations, and DC/DC converters, facilitating compliance with IEC-60664-1.

Features

AI Translation
  • Negligible or no reverse recovery
  • Switching behavior independent of temperature
  • Dedicated for PFC applications
  • High forward surge capability
  • Junction temperature operating range -40℃ to 175℃
  • Minimum 5.38mm anode-to-cathode creepage distance in D²PAK HV package
  • ECOPACK2 compliant
  • High efficiency product

Applications

AI Translation
  • DC/DC converter
  • High-frequency inverter
  • Snubber
  • Boost PFC function