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ST M24C16-DRDW8TP/K

Manufacturer
MPN
M24C16-DRDW8TP/K
LCSC Part #
C5267650
Packaging
TSSOP-8
Customer #
Key Attributes
16Kbit 1MHz I2C TSSOP-8 Memory RoHS
DatasheetST M24C16-DRDW8TP/K
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerST
PackagingTSSOP-8
Operating Temperature-40℃~+105℃
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Noise suppression function;Page write protection function
Memory Size16Kbit
Voltage - Supply1.7V~5.5V;2mA
Clock Frequency1MHz
Access Time900ns;450ns
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)4ms
Standby Supply Current3uA
Write Cycle Endurance4,000,000 Cycles
InterfaceI2C

Introduction

AI Translation

The M24C16-DRE is a 16-Kbit serial EEPROM device operating up to 105 ℃. The M24C16-DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2. The device is accessed by a simple serial |²C compatible interface running up to 1M Hz. The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24C16-DRE is a byte-alterable memory (〈2048x8 bits) organized as 128 pages of 16 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic. The M24C16-DRE offers an additional Identification Page (16 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters which can be later permanently locked in read-only mode.

Features

AI Translation
  • Compatible with all |²C bus modes
  • 1 MHz, 400 kHz, 100 kHz
  • 16 Kbits (2 Kbytes) of EEPROM Page size: 16 bytes
  • Additional Write lockable page (Identification page)
  • Extended temperature and voltage range: -40 ℃ to 105 ℃, 1.7 V to 5.5 V
  • Short Write cycle time: Byte Write within 4 ms, Page Write within 4 ms
  • Write cycle endurance: 4 million Write cycles at 25 ℃, 1.2 million Write cycles at 85 ℃, 900 k Write cycles at 105 ℃
  • Data retention: more than 50 years at 105 ℃, 200 years at 55 ℃
  • ESD Protection (Human Body Model): 4000V
  • Packages RoHS compliant and halogen-free (ECOPACK2)