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GOFORD G12P06K
| Manufacturer | GOFORDAsian Brands |
| MPN | G12P06K |
| LCSC Part # | C5258965 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET 60V 12A TO-252 |
| Datasheet | GOFORD G12P06K |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 56mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.108nF | |
| Gate Charge(Qg) | 23nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 56mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.108nF | |
| Gate Charge(Qg) | 23nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 56mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.108nF | |
| Gate Charge(Qg) | 23nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOFORD | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 74pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF | |
| RDS(on) | 56mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.108nF | |
| Gate Charge(Qg) | 23nC | |
| Vgs | ±20V | |
| Type | P-Channel |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |