DIODES DMT10H015LFG-7
| Manufacturer | |
| MPN | DMT10H015LFG-7 |
| LCSC Part # | C5245407 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | 100V 42A 3.5V 35W 13.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS |
| Datasheet | DIODES DMT10H015LFG-7 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) — minimizes conduction losses
- Excellent Qgd × RDS(ON) product (figure of merit)
- Advanced technology for DC/DC converters
- Small, thermally efficient package for higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- 100% single-pulse avalanche energy (UIS) rated
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free; "Green" device
- Device meets JEDEC standards (as referenced in AEC-Q) for high reliability
Applications
AI Translation
- Synchronous rectifier
- Backlight illumination
- Power management
- DC-DC converter
In-Stock: 2
2 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.8716 | $ 1.87 |
| 10+ | $ 1.6003 | $ 16.00 |
| 30+ | $ 1.4508 | $ 43.52 |
| 100+ | $ 1.2819 | $ 128.19 |
| 500+ | $ 1.2071 | $ 603.55 |
| 1,000+ | $ 1.173 | $ 1173.00 |
Standard Packaging2000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 42A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 13.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) — minimizes conduction losses
- Excellent Qgd × RDS(ON) product (figure of merit)
- Advanced technology for DC/DC converters
- Small, thermally efficient package for higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- 100% single-pulse avalanche energy (UIS) rated
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free; "Green" device
- Device meets JEDEC standards (as referenced in AEC-Q) for high reliability
Applications
AI Translation
- Synchronous rectifier
- Backlight illumination
- Power management
- DC-DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SISS46DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 20 | $ 2.2112 | ||
| CSD19537Q3T | TI | VSONP-8(3.3x3.3) | 1,239 | $ 2.2395 | ||
| CSD19537Q3 | TI | VSON-8-EP(3.3x3.3) | 444 | $ 0.9462 | ||
| DMT10H015LFG-13 | DIODES | PowerDI3333-8 | 2,555 | $ 0.5278 | ||
| SISS5108DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 6 | $ 2.026 | ||
| FDMC86184 | onsemi | PQFN-8(3.3x3.3) | 78 | $ 2.6501 | ||
| CMSC130N10 | Cmos | DFN-8(3.3x3.3) | 480 | $0.2296 $0.2416 | ||
| SISS5110DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 8 | $ 1.5386 | ||
| IQE065N10NM5ATMA1 | Infineon | TSON-8-EP(3.3x3.3) | 0 | $ 2.6807 | ||
| NCEP12N10AQ | NCE | DFN-8L(3.3x3.3) | 0 | $ 0.4319 |



