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DIODES DMP1007UCB9-7 product image
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DIODES DMP1007UCB9-7

Manufacturer
DIODES
MPN
DMP1007UCB9-7
LCSC Part #
C5245342
Packaging
UWLB1515-9
Customer #
Key Attributes
MOSFET P-CH 8V 13.2A UWLB1515-9
DatasheetDIODES DMP1007UCB9-7
RoHS Compliance4 documents available
In-Stock: 38
38 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.7644$ 1.76
10+$ 1.7384$ 17.38
30+$ 1.7205$ 51.62
100+$ 1.7027$ 170.27
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingUWLB1515-9
Operating Temperature-55℃~+150℃
Drain to Source Voltage8V
Current - Continuous Drain(Id)13.2A
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation1.53W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)5.7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)900pF
Gate Charge(Qg)8.2nC@4.5V
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Introduction

AI Translation

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.

Features

AI Translation
  • LD-MOS Technology with the Lowest Figure of Merit
  • RDS(ON)=5.7mΩ to Minimize On-State Losses
  • Qg=8.2nC for Ultra-Fast Switching
  • VGS(TH)=-0.6V Typ. for a Low Turn-On Potential
  • CSP with Footprint 1.5mm×1.5mm
  • Height =0.62mm for Low Profile
  • ESD Protection of Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

AI Translation
  • DC-DC Converters
  • Battery Management
  • Load Switch