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ElecSuper BSS138PS
| Manufacturer | ElecSuperAsian Brands |
| MPN | BSS138PS |
| LCSC Part # | C5224289 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 410mA SOT-363 |
| Datasheet | ElecSuper BSS138PS |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-363 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 9.7pF | |
| Current - Continuous Drain(Id) | 410mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 417mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 1.5Ω@10V;1.6Ω@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 650pC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-363 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 9.7pF | |
| Current - Continuous Drain(Id) | 410mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 417mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 1.5Ω@10V;1.6Ω@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 650pC@4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BSS138PS is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138PS is lead-free.
Features
AI Translation
- 60V, RDS(ON) = 1.5 Ω (typ) at VGS = 10 V
- RDS(ON) = 1.6 Ω (typ) at VGS = 4.5 V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop computers
- DC/DC conversion
Every Order Guarantee
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In-Stock: 19,570
19,570 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0329 | $ 0.16 |
| 50+ | $ 0.0258 | $ 1.29 |
| 150+ | $ 0.0219 | $ 3.29 |
| 500+ | $ 0.0195 | $ 9.75 |
| 3,000+ | $ 0.0175 | $ 52.50 |
| 6,000+ | $ 0.0164 | $ 98.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-363 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 9.7pF | |
| Current - Continuous Drain(Id) | 410mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 417mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 1.5Ω@10V;1.6Ω@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 650pC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-363 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 9.7pF | |
| Current - Continuous Drain(Id) | 410mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 417mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 1.5Ω@10V;1.6Ω@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 25pF | |
| Gate Charge(Qg) | 650pC@4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BSS138PS is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product BSS138PS is lead-free.
Features
AI Translation
- 60V, RDS(ON) = 1.5 Ω (typ) at VGS = 10 V
- RDS(ON) = 1.6 Ω (typ) at VGS = 4.5 V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop computers
- DC/DC conversion
C5224289 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BSS138BKS | ElecSuper | SOT-363 | 1,550 | $ 0.0367 | ||
| BSS138AKDW | ElecSuper | SOT-363 | 730 | $ 0.033 | ||
| BSS138DW-7-F-ES | ElecSuper | SOT-363 | 3,420 | $ 0.041 |