LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
TI LM5110-3SDX/NOPB product image
  • LM5110-3SDX/NOPB thumbnail 1
  • LM5110-3SDX/NOPB thumbnail 2
  • LM5110-3SDX/NOPB thumbnail 3
  • Pinout
  • Footprint
Images for reference only

TI LM5110-3SDX/NOPB

Manufacturer
TI
MPN
LM5110-3SDX/NOPB
LCSC Part #
C5218792
Packaging
WSON-10(4x4)
Customer #
Key Attributes
3.5V~14V 5A 3A WSON-10(4x4) Gate Drivers RoHS
DatasheetTI LM5110-3SDX/NOPB
RoHS Compliance2 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 8
8 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.0037$ 3.00
10+$ 2.9332$ 29.33
30+$ 2.8874$ 86.62
100+$ 2.8399$ 283.99
Standard Packaging4500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingWSON-10(4x4)
Input Logic Level - Low800mV
Low Level Delay Time40ns
High Level Delay Time40ns
Quiescent Current2mA
Input Logic Level - High2.2V
Voltage - Supply3.5V~14V
Driven ConfigurationLow Side
Operating Temperature-40℃~+125℃
Current - Output Low(IOL)5A
Rise Time14ns
Fall Time12ns
FeaturesEnable shutdown
Current - Output High(IOH)3A
Load TypeMOSFET
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally - enhanced WSON-10 packages.

Features

AI Translation
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages: SOIC-8 WSON-10 (4 mm×4 mm)

Applications

AI Translation
  • Synchronous Rectifier Gate Drivers
  • Switch-Mode Power Supply Gate Driver
  • Solenoid and Motor Drivers