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onsemi NTTFSS1D1N02P1E
| Manufacturer | |
| MPN | NTTFSS1D1N02P1E |
| LCSC Part # | C5208926 |
| Packaging | WDFN-9(3.3x3.3) |
| Customer # | |
| Key Attributes | 25V 264A 89W 0.85mΩ@10V 1 N-channel WDFN-9(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet | onsemi NTTFSS1D1N02P1E |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-9(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 264A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 89W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-9(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 264A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 89W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 60nC@10V |
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Introduction
AI Translation
This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Advanced source-down package technology (3.3x3.3mm) with excellent thermal performance
- Ultra-low RDS(on) for improved system efficiency
- Low QG and capacitance, minimizing gate drive and switching losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applications
AI Translation
- DC-DC switching applications
- Reverse blocking applications
- Power load switching
- Battery management and protection
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.9625 | $ 3.96 |
| 10+ | $ 3.891 | $ 38.91 |
| 30+ | $ 3.8439 | $ 115.32 |
| 100+ | $ 3.7952 | $ 379.52 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-9(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 264A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 89W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-9(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 264A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 89W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 0.85mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 60nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Advanced source-down package technology (3.3x3.3mm) with excellent thermal performance
- Ultra-low RDS(on) for improved system efficiency
- Low QG and capacitance, minimizing gate drive and switching losses
- Lead-free, halogen-free/bromine-free flame retardant, RoHS compliant
Applications
AI Translation
- DC-DC switching applications
- Reverse blocking applications
- Power load switching
- Battery management and protection
C5208926 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTTFSSCH0D7N02X | onsemi | WDFN-9(3.3x3.3) | 100 | $ 3.512 | ||
| IQEH54NE2LM7UCGATMA1 | Infineon | TFN-9 | 10 | $ 5.6732 | ||
| IQEH68NE2LM7UCGATMA1 | Infineon | TTFN-9 | 15 | $ 4.1071 | ||
| IQD005N04NM6CGATMA1 | Infineon | TTFN-9 | 100 | $ 7.7349 | ||
| IQE008N03LM5CGATMA1 | Infineon | TTFN-9-1 | 71 | $ 2.1502 | ||
| IQDH88N06LM5CGATMA1 | Infineon | TTFN-9 | 5 | $ 7.6244 | ||
| IQEH50NE2LM7ZCGATMA1 | Infineon | TFN-9 | 0 | $ 5.077 | ||
| IQEH80NE2LM7UCGSCATMA1 | Infineon | TFN-9 | 0 | $ 4.627 |