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Modelos EDAEasyEDA
NXP MRFE6VS25GNR1
| Fabricante | |
| N.º de pieza fab. | MRFE6VS25GNR1 |
| Nº LCSC | C5196373 |
| Emb. | SOT-1731-1 |
| Número de Cliente | |
| Atrib. clave | 25W 133V 2V N-Channel SOT-1731-1 Single FETs, MOSFETs |
| Hoja de Datos | NXP MRFE6VS25GNR1 |
| Piezas alternativas | 1 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NXP | |
| Emb. | SOT-1731-1 | |
| Output Capacitance(Coss) | 14.2pF | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 133V | |
| Operating Temperature | -40℃~+150℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.26pF | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | 39.2pF | |
| Gate Charge(Qg) | - | |
| Vgs | - | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NXP | |
| Emb. | SOT-1731-1 | |
| Output Capacitance(Coss) | 14.2pF | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 133V | |
| Operating Temperature | -40℃~+150℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | - |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.26pF | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | 39.2pF | |
| Gate Charge(Qg) | - | |
| Vgs | - | |
| Type | N-Channel |
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Descripción
Traducción por IA
RF power transistors designed for narrowband and wideband industrial, scientific, and medical (ISM) and broadcast applications operating at frequencies from 1.8 to 2000 MHz. These devices are manufactured on an enhanced ruggedness platform, suitable for applications where high VSWR conditions may be encountered.
Características
Traducción por IA
- Wide operating frequency range
- Extremely high durability
- No matching required for ultra-wideband operation
- Integrated stability enhancement features
- Low thermal resistance
- Enhanced ESD protection circuit
Aplicaciones
Traducción por IA
- Narrowband and wideband industrial, scientific, and medical (ISM) applications
- Broadcast applications
Agotado
Avisarme
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 5+ | $ 0.485 | $ 2.43 |
| 1,000+ | $ 0.1892 | $ 189.20 |
| 2,500+ | $ 0.1827 | $ 456.75 |
| 5,000+ | $ 0.1779 | $ 889.50 |
Encapsulado Estándar500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NXP | |
| Emb. | SOT-1731-1 | |
| Output Capacitance(Coss) | 14.2pF | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 133V | |
| Operating Temperature | -40℃~+150℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.26pF | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | 39.2pF | |
| Gate Charge(Qg) | - | |
| Vgs | - | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | NXP | |
| Emb. | SOT-1731-1 | |
| Output Capacitance(Coss) | 14.2pF | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 133V | |
| Operating Temperature | -40℃~+150℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | - |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.26pF | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | 39.2pF | |
| Gate Charge(Qg) | - | |
| Vgs | - | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
RF power transistors designed for narrowband and wideband industrial, scientific, and medical (ISM) and broadcast applications operating at frequencies from 1.8 to 2000 MHz. These devices are manufactured on an enhanced ruggedness platform, suitable for applications where high VSWR conditions may be encountered.
Características
Traducción por IA
- Wide operating frequency range
- Extremely high durability
- No matching required for ultra-wideband operation
- Integrated stability enhancement features
- Low thermal resistance
- Enhanced ESD protection circuit
Aplicaciones
Traducción por IA
- Narrowband and wideband industrial, scientific, and medical (ISM) applications
- Broadcast applications
C5196373 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| MRFE6VS25GNR1528 | NXP | - | 0 | $ 3.0248 |