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HXY MOSFET NVMFD5C674NLWFT1G-HXY product image
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HXY MOSFET NVMFD5C674NLWFT1G-HXY

Manufacturer
HXY MOSFETAsian Brands
MPN
NVMFD5C674NLWFT1G-HXY
LCSC Part #
C51949329
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
60W 60V 35A 11mΩ@10V 2 N-Channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DatasheetHXY MOSFET NVMFD5C674NLWFT1G-HXY
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
Output Capacitance(Coss)230pF
Ciss-Input Capacitance930pF
Pd - Power Dissipation60W
Drain to Source Voltage60V
Operating Temperature-55℃~+175℃
ConfigurationStandalone
Current - Continuous Drain(Id)35A
Reverse Transfer Capacitance (Crss)8pF
RDS(on)11mΩ@10V
Number2 N-Channel
Gate Charge(Qg)22nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel
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Introduction

AI Translation

NVMFD5C674NLWFT1G employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.

Features

AI Translation
  • Drain-source voltage VDS = 60V, drain current ID = 35A
  • On-resistance RDS(ON) < 14mΩ at gate-source voltage VGS = 10V

Applications

AI Translation
  • Consumer electronics power supplies
  • Motor control
  • Synchronous rectification
  • Isolated DC
  • Synchronous rectification applications