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R+O HP804C360D

Manufacturer
R+OAsian Brands
MPN
HP804C360D
LCSC Part #
C51883848
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N/P-CH 40V 8A SOP-8
DatasheetR+O HP804C360D
RoHS Compliance2 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOP-8
Operating Temperature-55℃~+150℃
Drain to Source Voltage40V
Output Capacitance(Coss)100pF;121pF
Current - Continuous Drain(Id)8A
Ciss-Input Capacitance908pF
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss)88pF
RDS(on)21mΩ@10V
Number1 N-Channel + 1 P-Channel
Gate Charge(Qg)20.9nC@10V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel + P-Channel
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Features

AI Translation
  • N-Channel MOSFET
  • Drain-Source Voltage (VDS) = 40 V
  • Drain Current (ID) = 8 A
  • RDS(on) < 21 mΩ at VGS = 10 V
  • RDS(on) < 32 mΩ at VGS = 4.5 V
  • P-Channel MOSFET
  • Drain-Source Voltage (VDS) = -40 V
  • Drain Current (ID) = -6 A
  • RDS(on) < 36 mΩ at VGS = -10 V
  • RDS(on) < 47 mΩ at VGS = -4.5 V
  • Low gate charge and on-resistance
  • Fast switching speed
  • Improved dv/dt capability, high ruggedness

Applications

AI Translation
  • Power switching applications
  • Low voltage applications
  • DC/DC converters