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EDA ModelsEasyEDA
VBsemi Elec VBA1101N
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | VBA1101N |
| LCSC Part # | C516883 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 16A SO-8 |
| Datasheet | VBsemi Elec VBA1101N |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 790pF | |
| Current - Continuous Drain(Id) | 16A | |
| Ciss-Input Capacitance | 3.41nF | |
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss) | 160pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 451nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 790pF | |
| Current - Continuous Drain(Id) | 16A | |
| Ciss-Input Capacitance | 3.41nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss) | 160pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 451nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- Material categorization
Applications
AI Translation
- DC/DC primary-side switching
- Telecom/server
- Motor drive control
- Synchronous rectification
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 790pF | |
| Current - Continuous Drain(Id) | 16A | |
| Ciss-Input Capacitance | 3.41nF | |
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss) | 160pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 451nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 790pF | |
| Current - Continuous Drain(Id) | 16A | |
| Ciss-Input Capacitance | 3.41nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.5W | |
| Reverse Transfer Capacitance (Crss) | 160pF | |
| RDS(on) | 9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 451nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
- Material categorization
Applications
AI Translation
- DC/DC primary-side switching
- Telecom/server
- Motor drive control
- Synchronous rectification
C516883 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |