Samwin SWHA065R03VLT
| Manufacturer | SamwinAsian Brands |
| MPN | SWHA065R03VLT |
| LCSC Part # | C5151868 |
| Packaging | DFN(5x6) |
| Customer # | |
| Key Attributes | MOSFET 30V 58A DFN(5x6) |
| Datasheet | Samwin SWHA065R03VLT |
| RoHS Compliance | 5 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(5x6) | |
| Output Capacitance(Coss) | 198pF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF | |
| RDS(on) | 6.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.529nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(5x6) | |
| Output Capacitance(Coss) | 198pF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 58A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF | |
| RDS(on) | 6.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.529nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is manufactured using advanced technology. The technology enables superior characteristics in the power MOSFET, including fast switching times, low on-resistance, low gate charge, and particularly excellent avalanche characteristics.
Features
AI Translation
- RDS(ON) = 9.7mΩ @ VGS = 4.5V (Typ 6.4mΩ) @ VGS = 10V
- Improved dv/dt Capability
- This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially DSS : 30V
- High ruggedness
Applications
AI Translation
- Synchronous Rectification - Li-ion Battery Protection Board - Inverter
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(5x6) | |
| Output Capacitance(Coss) | 198pF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF | |
| RDS(on) | 6.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.529nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(5x6) | |
| Output Capacitance(Coss) | 198pF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 58A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF | |
| RDS(on) | 6.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.529nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is manufactured using advanced technology. The technology enables superior characteristics in the power MOSFET, including fast switching times, low on-resistance, low gate charge, and particularly excellent avalanche characteristics.
Features
AI Translation
- RDS(ON) = 9.7mΩ @ VGS = 4.5V (Typ 6.4mΩ) @ VGS = 10V
- Improved dv/dt Capability
- This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially DSS : 30V
- High ruggedness
Applications
AI Translation
- Synchronous Rectification - Li-ion Battery Protection Board - Inverter
C5151868 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



