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Samwin SWD7N65D
| Manufacturer | SamwinAsian Brands |
| MPN | SWD7N65D |
| LCSC Part # | C5151757 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET 650V 7A TO-252 |
| Datasheet | Samwin SWD7N65D |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 108pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 108pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The AON7401-HXY utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, with operation down to 4.5V gate voltage. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- High ruggedness
- RDS(ON) .1 Ω @ VGS = 10V
- Improved dv/dt Capability
- This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics
Applications
AI Translation
- Charger
- LED
- Computer power supply
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4311 | $ 0.43 |
| 10+ | $ 0.3409 | $ 3.41 |
| 30+ | $ 0.3032 | $ 9.10 |
| 100+ | $ 0.2557 | $ 25.57 |
| 500+ | $ 0.2475 | $ 123.75 |
| 1,000+ | $ 0.2344 | $ 234.40 |
Standard Packaging2500/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 108pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 108pF | |
| Pd - Power Dissipation | 2.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF | |
| RDS(on) | 1.1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The AON7401-HXY utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, with operation down to 4.5V gate voltage. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- High ruggedness
- RDS(ON) .1 Ω @ VGS = 10V
- Improved dv/dt Capability
- This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics
Applications
AI Translation
- Charger
- LED
- Computer power supply
C5151757 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| SWD7N60D | Samwin | Similar | TO-252 | 10 | $ 0.4261 |
1 more alternative parts.View all substitutes