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VBsemi Elec STP14NF10-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | STP14NF10-VB |
| LCSC Part # | C5137430 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 18A TO-220AB |
| Datasheet | VBsemi Elec STP14NF10-VB |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 127mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 28nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 127mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 28nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
SS2308 is an N-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as mobile phone and notebook computer power management, as well as other battery-powered circuits requiring high-side switching and low on-state power dissipation in compact SMT packages.
Features
AI Translation
- TrenchFET Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested
Applications
AI Translation
- Isolated DC/DC Converters
- N-Channel MOSFET
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6189$ 0.5261 | $ 0.53 |
| 10+ | $ 0.4987$ 0.4239 | $ 4.24 |
| 50+ | $ 0.4094$ 0.3480 | $ 17.40 |
| 100+ | $ 0.3444$ 0.2928 | $ 29.28 |
| 500+ | $ 0.3168$ 0.2693 | $ 134.65 |
| 1,000+ | $ 0.2989$ 0.2541 | $ 254.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 127mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 28nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 105W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 127mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 28nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
SS2308 is an N-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as mobile phone and notebook computer power management, as well as other battery-powered circuits requiring high-side switching and low on-state power dissipation in compact SMT packages.
Features
AI Translation
- TrenchFET Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested
Applications
AI Translation
- Isolated DC/DC Converters
- N-Channel MOSFET
C5137430 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FQP13N10L-VB | VBsemi Elec | TO-220AB | 11 | $0.6879 $0.7241 | ||
| BUZ21-VB | VBsemi Elec | TO-220AB | 6 | $0.4657 $0.5478 | ||
| PHP27NQ11T,127-VB | VBsemi Elec | TO-220AB | 5 | $0.5937 $0.6249 | ||
| IRF510NPBF-VB | VBsemi Elec | TO-220AB | 95 | $0.7096 $0.7469 | ||
| IRL530NPBF-VB | VBsemi Elec | TO-220AB | 69 | $0.7123 $0.7497 | ||
| IRF520NPBF-VB | VBsemi Elec | TO-220AB | 58 | $0.6776 $0.7132 | ||
| IRL520NPBF-VB | VBsemi Elec | TO-220AB | 51 | $0.6756 $0.7111 | ||
| IRF530NPBF-VB | VBsemi Elec | TO-220AB | 5 | $0.6632 $0.6981 | ||
| IRL530PBF-VB | VBsemi Elec | TO-220AB | 0 | $0.7116 $0.749 | ||
| IRF520PBF-VB | VBsemi Elec | TO-220AB | 0 | $0.7224 $0.7604 |