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DOINGTER DD006NG-A
| Manufacturer | DOINGTERAsian Brands |
| MPN | DD006NG-A |
| LCSC Part # | C50394174 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 40V 100A 1.9V 142W 4.2mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs |
| Datasheet | DOINGTER DD006NG-A |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 266pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 142W | |
| RDS(on) | 4.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.777nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 266pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 142W | |
| RDS(on) | 4.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.777nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS=40V, ID=100A, RDS(ON)<5.5mΩ at VGS=10V
- Low gate charge.
- Green and eco-friendly devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal performance.
In-Stock: 2,555
2,555 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2291 | $ 1.15 |
| 50+ | $ 0.1875 | $ 9.38 |
| 150+ | $ 0.1697 | $ 25.46 |
| 500+ | $ 0.1475 | $ 73.75 |
| 2,500+ | $ 0.1376 | $ 344.00 |
| 5,000+ | $ 0.1317 | $ 658.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 266pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Pd - Power Dissipation | 142W | |
| RDS(on) | 4.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.777nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 266pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 142W | |
| RDS(on) | 4.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.777nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design, delivering excellent RDS(on) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS=40V, ID=100A, RDS(ON)<5.5mΩ at VGS=10V
- Low gate charge.
- Green and eco-friendly devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal performance.
C50394174 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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