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BORN BMI404D1538

Manufacturer
BORNAsian Brands
MPN
BMI404D1538
LCSC Part #
C50338768
Packaging
TO-252-4L
Customer #
Key Attributes
MOSFET N/P-CH 40V 30A TO-252-4L
DatasheetBORN BMI404D1538
In-Stock: 425
425 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2057$ 1.03
50+$ 0.1631$ 8.16
150+$ 0.1448$ 21.72
500+$ 0.122$ 61.00
2,500+$ 0.1119$ 279.75
5,000+$ 0.1058$ 529.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerBORN
PackagingTO-252-4L
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A;18A
Output Capacitance(Coss)208pF;198pF
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)142pF;125pF
RDS(on)12mΩ@10V;28mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.512nF;1.217nF
Gate Charge(Qg)23nC@10V;23.5nC@10V
TypeN-Channel + P-Channel
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Introduction

AI Translation

Complementary enhancement-mode MOSFETs in a TO-252-4L package. The BMI404D1538 employs advanced trench technology and design to deliver excellent RDS(ON) with low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • N-Channel:
  • VDS = 40 V, ID = 30 A
  • RDS(ON)@VGS = 10V, ID = 8A, typical = 12mΩ
  • RDS(ON)@VGS = 4.5 V, ID = 4 A, typical = 17 mΩ
  • P-Channel:
  • V(BR)DSS = -40 V, ID = -18 A
  • RDS(ON)@VGS = -10 V, ID = -8 A, typical = 28 mΩ
  • RDS(ON)@VGS = -4.5 V, ID = -4 A, typical = 38 mΩ

Applications

AI Translation
  • Power Factor Correction (PFC)
  • Switched-Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • LED Lighting Power Supply