Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YFW | |
| Packaging | TO-126 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vbe On(VBE(on)) | 2.5V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 750 | |
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V@1.5A,30mA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YFW | |
| Packaging | TO-126 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vbe On(VBE(on)) | 2.5V | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 750 | |
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V@1.5A,30mA |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681 are silicon epitaxial base NPN power transistors in a monolithic Darlington configuration, housed in a TO-126 plastic package. They are suitable for medium-power linear and switching applications. The complementary PNP types are BD676, BD676A, BD678, BD678A, BD680, BD680A, and BD682, respectively.
Applications
AI Translation
- Linear and switching industrial equipment.
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YFW | |
| Packaging | TO-126 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vbe On(VBE(on)) | 2.5V | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 750 | |
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V@1.5A,30mA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YFW | |
| Packaging | TO-126 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vbe On(VBE(on)) | 2.5V | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 750 | |
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 40W | |
| Current - Collector(Ic) | 4A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 2.5V@1.5A,30mA |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BD675, BD675A, BD677, BD677A, BD679, BD679A, and BD681 are silicon epitaxial base NPN power transistors in a monolithic Darlington configuration, housed in a TO-126 plastic package. They are suitable for medium-power linear and switching applications. The complementary PNP types are BD676, BD676A, BD678, BD678A, BD680, BD680A, and BD682, respectively.
Applications
AI Translation
- Linear and switching industrial equipment.
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



