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NCE NCEP040N85
| Manufacturer | NCEAsian Brands |
| MPN | NCEP040N85 |
| LCSC Part # | C503049 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 200W 85V 140A 3.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs |
| Datasheet | NCE NCEP040N85 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 850pF | |
| Ciss-Input Capacitance | 4.95nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V | |
| Current - Continuous Drain(Id) | 140A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 88nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 850pF | |
| Ciss-Input Capacitance | 4.95nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 140A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 88nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of devices utilizes Super Trench II technology, uniquely optimized to deliver the highest-efficiency high-frequency switching performance. With ultra-low RDS(ON) and Qg (gate charge), both conduction losses and switching losses are minimized. These devices are ideal for high-frequency switching and synchronous rectification applications.
Features
AI Translation
- Drain-Source Voltage (VDS): 85 V, Drain Current (ID): 140 A
- Drain-Source On-Resistance (RDS(ON)) typical values: 3.5 mΩ (TO-220 package, VGS = 10 V) 3.3 mΩ (TO-263 package, VGS = 10 V)
- Excellent gate charge × RDS(ON) figure of merit (FOM)
- Ultra-low on-resistance (RDS(ON))
- Operating temperature up to 175℃
- Lead-free lead plating
- 100% UIS tested
- 100% ΔVDS tested
Applications
AI Translation
- DC/DC converter
- High-frequency switching and synchronous rectification applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.6506 | $ 1.65 |
| 10+ | $ 1.3044 | $ 13.04 |
| 50+ | $ 1.1298 | $ 56.49 |
| 100+ | $ 0.9582 | $ 95.82 |
| 500+ | $ 0.8562 | $ 428.10 |
| 1,000+ | $ 0.8021 | $ 802.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 850pF | |
| Ciss-Input Capacitance | 4.95nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V | |
| Current - Continuous Drain(Id) | 140A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 88nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 850pF | |
| Ciss-Input Capacitance | 4.95nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 140A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 88nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of devices utilizes Super Trench II technology, uniquely optimized to deliver the highest-efficiency high-frequency switching performance. With ultra-low RDS(ON) and Qg (gate charge), both conduction losses and switching losses are minimized. These devices are ideal for high-frequency switching and synchronous rectification applications.
Features
AI Translation
- Drain-Source Voltage (VDS): 85 V, Drain Current (ID): 140 A
- Drain-Source On-Resistance (RDS(ON)) typical values: 3.5 mΩ (TO-220 package, VGS = 10 V) 3.3 mΩ (TO-263 package, VGS = 10 V)
- Excellent gate charge × RDS(ON) figure of merit (FOM)
- Ultra-low on-resistance (RDS(ON))
- Operating temperature up to 175℃
- Lead-free lead plating
- 100% UIS tested
- 100% ΔVDS tested
Applications
AI Translation
- DC/DC converter
- High-frequency switching and synchronous rectification applications
C503049 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| NCEP85T16 | NCE | Similar | TO-220-3L | 329 | $ 1.8814 | ||
| NCEP15T14 | NCE | Similar | TO-220-3L | 669 | $ 2.4841 | ||
| NCEP039N10M | NCE | Similar | TO-220 | 477 | $ 1.1941 | ||
| NCEP028N85 | NCE | Similar | TO-220 | 212 | $ 1.9967 | ||
| NCEP026N10 | NCE | Similar | TO-220 | 12 | $ 2.2745 |