HXY MOSFET BD681
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | BD681 |
| LCSC Part # | C50285118 |
| Packaging | TO-126 |
| Customer # | |
| Key Attributes | 100V 8000 4A NPN TO-126 Single Bipolar Transistors |
| Datasheet | HXY MOSFET BD681 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-126 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 8000 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 4A | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| type | NPN | |
| Number | - | |
| Vce Saturation(VCE(sat)) | 1.8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-126 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 8000 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 4A | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| type | NPN | |
| Number | - | |
| Vce Saturation(VCE(sat)) | 1.8V |
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Features
AI Translation
- Complement To BD680,BD682
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 15
15 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3001$ 0.2851 | $ 1.43 |
| 50+ | $ 0.2377$ 0.2259 | $ 11.30 |
| 150+ | $ 0.211$ 0.2005 | $ 30.08 |
| 500+ | $ 0.1776$ 0.1688 | $ 84.40 |
| 2,500+ | $ 0.1628$ 0.1547 | $ 386.75 |
| 5,000+ | $ 0.1539$ 0.1463 | $ 731.50 |
Standard Packaging500/Full Bag | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-126 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 8000 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 4A | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| type | NPN | |
| Number | - | |
| Vce Saturation(VCE(sat)) | 1.8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-126 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 8000 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 4A | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| type | NPN | |
| Number | - | |
| Vce Saturation(VCE(sat)) | 1.8V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Complement To BD680,BD682
C50285118 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



