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NCE NCE0110AK
| Manufacturer | NCEAsian Brands |
| MPN | NCE0110AK |
| LCSC Part # | C502779 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 10A TO-252-2L |
| Datasheet | NCE NCE0110AK |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 980pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.5nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 980pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.5nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
NCE0110AK utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 10 A
- RDS(ON) < 130 mΩ @ VGS = 10 V (typical: 95 mΩ)
- RDS(ON) < 140 mΩ @ VGS = 4.5 V (typical: 100 mΩ)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency at high EAS
- Superior package with good thermal dissipation
- Special process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard-switching and high-frequency circuits
- Uninterruptible power supplies
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 980pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.5nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 37pF | |
| Ciss-Input Capacitance | 980pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 10A | |
| Reverse Transfer Capacitance (Crss) | 27pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.5nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
NCE0110AK utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 10 A
- RDS(ON) < 130 mΩ @ VGS = 10 V (typical: 95 mΩ)
- RDS(ON) < 140 mΩ @ VGS = 4.5 V (typical: 100 mΩ)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency at high EAS
- Superior package with good thermal dissipation
- Special process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard-switching and high-frequency circuits
- Uninterruptible power supplies
C502779 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |