HXY MOSFET MJD41C
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | MJD41C |
| LCSC Part # | C50269816 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | 100V 200 3A 1 NPN NPN TO-252-2L Single Bipolar Transistors |
| Datasheet | HXY MOSFET MJD41C |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 200 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 3A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 200 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 3A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
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Features
AI Translation
- Medium Power Complementary Silicon Transistors
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 200 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 3A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 200 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 3A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Medium Power Complementary Silicon Transistors
C50269816 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



