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ST STU3N80K5
| Manufacturer | |
| MPN | STU3N80K5 |
| LCSC Part # | C501071 |
| Packaging | TO-251(IPAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 800V 2.5A TO-251(IPAK) |
| Datasheet | ST STU3N80K5 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
AI Translation
- Industry’s lowest RDS(on) X area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.409 | $ 0.41 |
| 10+ | $ 0.3992 | $ 3.99 |
| 30+ | $ 0.3927 | $ 11.78 |
| 100+ | $ 0.3846 | $ 38.46 |
Standard Packaging75/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 130pF | |
| Gate Charge(Qg) | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
AI Translation
- Industry’s lowest RDS(on) X area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
C501071 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPU80R600P7 | Infineon | TO-251-3 | 41 | $ 5.956 | ||
| IPU80R1K4P7 | Infineon | TO-251-3 | 16 | $1.1466 $2.9399 | ||
| STU4N80K5 | ST | IPAK(TO-251) | 0 | $ 1.8066 | ||
| IPS80R600P7 | Infineon | TO-251-3 | 0 | $ 1.7957 | ||
| IPS80R2K4P7 | Infineon | TO-251-3 | 0 | $ 0.8689 | ||
| IPU80R2K4P7 | Infineon | TO-251-3 | 0 | $ 0.8413 | ||
| SIHU2N80AE-GE3 | VISHAY | TO-251AA | 0 | $ 0.5247 | ||
| IPU95R1K2P7 | Infineon | TO-251-3 | 0 | $ 1.6242 | ||
| IPU80R750P7AKMA1-ND | Infineon | TO-251 | 0 | $ 0.7839 | ||
| IPS80R750P7 | Infineon | TO-251-3 | 0 | $ 1.6156 |