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onsemi FGH40N60SMD

Manufacturer
onsemi
MPN
FGH40N60SMD
LCSC Part #
C49512
Packaging
TO-247
Customer #
Key Attributes
IGBT 600V 80A TO-247
Datasheetonsemi FGH40N60SMD
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingTO-247
Td(off)92ns
Pd - Power Dissipation349W
Td(on)12ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)50pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.5V@250uA
Operating Temperature-55℃~+175℃@(Tj)
Vce Saturation(VCE(sat))2.5V@40A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)36ns
Switching Energy(Eoff)260uJ
Turn-On Energy (Eon)870uJ
Input Capacitance(Cies)1.88nF
Gate Charge(Qg)119nC@15V
Output Capacitance(Coes)180pF
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Introduction

AI Translation

Using novel field stop IGBT technology, new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

AI Translation
  • Maximum Junction Temperature: T_J = 175℃
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: V_CE(sat) = 1.9V (Typ.) @ I_C = 40 A
  • High Input Impedance
  • Fast Switching: E_OFF = 6.5 uJ/A
  • Tighten Parameter Distribution
  • RoHS Compliant

Applications

AI Translation
  • Solar Inverter
  • UPS
  • Welder
  • PFC
  • Telecom
  • ESS