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onsemi FGH40N60SMDRoHS

Manufacturer
onsemi
MPN
FGH40N60SMD
LCSC Part #
C49512
Packaging
TO-247
Customer #
Key Attributes
IGBT 600V 80A TO-247
Datasheetpdf icononsemi FGH40N60SMD

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingTO-247
Td(off)92ns
Pd - Power Dissipation349W
Td(on)12ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)50pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.5V@250uA
Vce Saturation(VCE(sat))2.5V@40A,15V
Reverse Recovery Time(trr)36ns
Switching Energy(Eoff)260uJ
Turn-On Energy (Eon)870uJ
Input Capacitance(Cies)1.88nF
Gate Charge(Qg)119nC@15V
Output Capacitance(Coes)180pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Using novel field stop IGBT technology, new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

AI Translation
  • Maximum Junction Temperature: T_J = 175℃
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: V_CE(sat) = 1.9V (Typ.) @ I_C = 40 A
  • High Input Impedance
  • Fast Switching: E_OFF = 6.5 uJ/A
  • Tighten Parameter Distribution
  • RoHS Compliant

Applications

AI Translation
  • Solar Inverter
  • UPS
  • Welder
  • PFC
  • Telecom
  • ESS
In-Stock: 57
57 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.8728$ 2.87
10+$ 2.4532$ 24.53
30+$ 1.9784$ 59.35
90+$ 1.7095$ 153.86
450+$ 1.5879$ 714.56
900+$ 1.5361$ 1382.49
Standard Packaging30/Full Tube
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