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DOINGTER DOS9DN04
| Manufacturer | DOINGTERAsian Brands |
| MPN | DOS9DN04 |
| LCSC Part # | C49441955 |
| Packaging | SOP-8D |
| Customer # | |
| Key Attributes | MOSFET 2N-CH 40V 9A SOP-8D |
| Datasheet | DOINGTER DOS9DN04 |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 630pF | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 630pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This dual N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 40 V, drain current (ID) = 9 A, on-resistance (RDS(ON)) < 22 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 630pF | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | SOP-8D | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 630pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 19mΩ@10V;22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This dual N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 40 V, drain current (ID) = 9 A, on-resistance (RDS(ON)) < 22 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation performance
C49441955 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |