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JSMSEMI PBSS5350Z,135-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | PBSS5350Z,135-JSM |
| LCSC Part # | C49366629 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | 50V 450 3A 1 PNP PNP SOT-223 Single Bipolar Transistors RoHS |
| Datasheet | JSMSEMI PBSS5350Z,135-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-223 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 450 | |
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 550mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 390mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-223 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 450 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 550mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 390mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: Ic and Icm
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-223 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 450 | |
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 550mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 390mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-223 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 450 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Pd - Power Dissipation | 550mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 390mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: Ic and Icm
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
C49366629 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |