HXY MOSFET FQD2N60CTF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	2A
Output Capacitance(Coss)	33pF
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	35W
RDS(on)	4.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)	3pF
Number	1 N-channel
Input Capacitance(Ciss)	335pF
Gate Charge(Qg)	9.5nC@10V
Type	N-Channel

In-Stock: 160

160 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.2383$ 0.2264	$ 1.13
50+	$ 0.1882$ 0.1788	$ 8.94
150+	$ 0.1668$ 0.1585	$ 23.78
500+	$ 0.14$ 0.1330	$ 66.50
2,500+	$ 0.1281$ 0.1217	$ 304.25
5,000+	$ 0.121$ 0.1150	$ 575.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	2A
Output Capacitance(Coss)	33pF
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	35W
RDS(on)	4.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)	3pF
Number	1 N-channel
Input Capacitance(Ciss)	335pF
Gate Charge(Qg)	9.5nC@10V
Type	N-Channel