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DOINGTER FDD4685-DO
| Manufacturer | DOINGTERAsian Brands |
| MPN | FDD4685-DO |
| LCSC Part # | C49208670 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 35A TO-252 |
| Datasheet | DOINGTER FDD4685-DO |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 35A | |
| Output Capacitance(Coss) | 260pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 35A | |
| Output Capacitance(Coss) | 260pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = -40V, drain current (ID) = -35A, on-resistance (RDS(ON)) < 16mΩ (typical: 12mΩ) at gate-source voltage (VGS) = -10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Superior package with excellent thermal performance
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 2,455
2,455 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1687 | $ 0.84 |
| 50+ | $ 0.1377 | $ 6.89 |
| 150+ | $ 0.1221 | $ 18.32 |
| 500+ | $ 0.1105 | $ 55.25 |
| 2,500+ | $ 0.0882 | $ 220.50 |
| 5,000+ | $ 0.0835 | $ 417.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 35A | |
| Output Capacitance(Coss) | 260pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 35A | |
| Output Capacitance(Coss) | 260pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = -40V, drain current (ID) = -35A, on-resistance (RDS(ON)) < 16mΩ (typical: 12mΩ) at gate-source voltage (VGS) = -10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Superior package with excellent thermal performance
C49208670 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| ATP106-DO | DOINGTER | TO-252 | 1,570 | $ 0.1528 | ||
| DD016PG | DOINGTER | TO-252 | 210 | $ 0.1565 | ||
| DOD35P04 | DOINGTER | TO-252 | 2,140 | $0.1410 $0.1532 | ||
| DD013PG | DOINGTER | TO-252 | 455 | $ 0.1851 | ||
| DD013PDG-D | DOINGTER | TO-252 | 2,500 | $ 0.2035 | ||
| DE016PG | DOINGTER | TO-252 | 305 | $ 0.4474 | ||
| ATP113-TL-H-DO | DOINGTER | TO-252 | 1,290 | $ 0.2819 | ||
| DE020PG | DOINGTER | TO-252 | 1,805 | $ 0.3247 | ||
| DH025PG | DOINGTER | TO-252 | 96 | $ 0.7342 | ||
| DOD4189 | DOINGTER | TO-252 | 0 | $ 0.1851 |