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DOINGTER DOD444

Manufacturer
DOINGTERAsian Brands
MPN
DOD444
LCSC Part #
C49190255
Packaging
TO-252
Customer #
Key Attributes
MOSFET 60V TO-252
DatasheetDOINGTER DOD444
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingTO-252
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)80pF
Ciss-Input Capacitance1.05nF
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss)45pF
RDS(on)21mΩ@10V
Number1 N-channel
Gate Charge(Qg)25nC@10V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 30 A, RDS(ON) < 30 mΩ at VGS = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • High-quality package with excellent thermal dissipation

Applications

AI Translation
  • Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply (UPS) - Power Factor Correction (PFC) - Charger