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DOWO 1N5822-E3/73-DW
| Manufacturer | DOWOAsian Brands |
| MPN | 1N5822-E3/73-DW |
| LCSC Part # | C48946127 |
| Packaging | DO-201AD |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 40V DO-201AD |
| Datasheet | DOWO 1N5822-E3/73-DW |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | DOWO | |
| Packaging | DO-201AD | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 550mV@10A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | DOWO | |
| Packaging | DO-201AD | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Operating Junction Temperature Range | -65℃~+125℃ |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 550mV@10A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Low power consumption, high efficiency
- High forward surge current capability
- Guaranteed high-temperature soldering: 250°C / 10 seconds, 0.375" lead length
- RoHS compliant
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | DOWO | |
| Packaging | DO-201AD | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Operating Junction Temperature Range | -65℃~+125℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 550mV@10A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | DOWO | |
| Packaging | DO-201AD | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Operating Junction Temperature Range | -65℃~+125℃ |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 550mV@10A | |
| Reverse Leakage Current (Ir) | 300uA@40V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 3A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Low power consumption, high efficiency
- High forward surge current capability
- Guaranteed high-temperature soldering: 250°C / 10 seconds, 0.375" lead length
- RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |