Infineon GS0650302LMRXUSA1

GS-065-030-2-L is an enhancement-mode GaN-on-Silicon power transistor. The properties of GaN enable high current, high voltage breakdown, and high switching frequency. GaN Systems achieves high-current dies and high yield through industry-leading innovations such as the patented Island Technology cell layout. The GS-065-030-2-L is a bottom-cooled transistor that provides low junction-to-case thermal resistance for high-power applications. Together, these characteristics enable highly efficient power switching.

• 650 V enhancement-mode power transistor
• 850 V transient drain-source voltage
• Bottom-side cooling, 8×8 mm PDFN package
• RDS(on) = 50 mΩ
• IDS,max = 30 A / IDSmax,Pulse = 60 A
• Simple gate drive requirements (0 V to 6 V)
• Transient-tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz)
• Fast and controllable rise and fall times
• Reverse conduction capability
• Zero reverse recovery loss
• Source sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant

• Bridgeless totem-pole PFC
• Consumer, industrial, and data center high-density power supplies
• High-power adapters
• LED lighting drivers
• Home appliance and industrial motor drivers
• Solar inverters
• Uninterruptible power supplies
• Laser drivers
• Wireless power transfer