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WPMtek WTM30N65AP
| Manufacturer | WPMtekAsian Brands |
| MPN | WTM30N65AP |
| LCSC Part # | C48642347 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 30A TO-220 |
| Datasheet | WPMtek WTM30N65AP |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WPMtek | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.84nF | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WPMtek | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.84nF | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
ESN7534 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent drain-to-source on-resistance (RDS(ON)) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN7534 is lead-free.
Features
AI Translation
- Drain-source breakdown voltage (BV\textDSS) = 650V, drain current (ID) = 30A
- On-resistance (RDS(on)): 0.130 Ω (max), gate-source voltage (V\textGS) = 10V
- Ultra-low figure of merit (FOM) (RDS(on) x Qg)
- Ultra-low switching losses
- Excellent stability and consistency
- 100% avalanche tested
- Built-in ESD diode
Applications
AI Translation
- Switching Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- AC-DC Converters
- Telecom, Solar
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9301 | $ 1.93 |
| 10+ | $ 1.6718 | $ 16.72 |
| 50+ | $ 1.5304 | $ 76.52 |
| 100+ | $ 1.3696 | $ 136.96 |
| 500+ | $ 1.2981 | $ 649.05 |
| 1,000+ | $ 1.2673 | $ 1267.30 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WPMtek | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.84nF | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WPMtek | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 61pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.84nF | |
| Gate Charge(Qg) | 65nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
ESN7534 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent drain-to-source on-resistance (RDS(ON)) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN7534 is lead-free.
Features
AI Translation
- Drain-source breakdown voltage (BV\textDSS) = 650V, drain current (ID) = 30A
- On-resistance (RDS(on)): 0.130 Ω (max), gate-source voltage (V\textGS) = 10V
- Ultra-low figure of merit (FOM) (RDS(on) x Qg)
- Ultra-low switching losses
- Excellent stability and consistency
- 100% avalanche tested
- Built-in ESD diode
Applications
AI Translation
- Switching Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- AC-DC Converters
- Telecom, Solar
C48642347 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WTM40N65AP | WPMtek | TO-220 | 6 | $ 2.1544 |