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AOS AOD4189

Manufacturer
AOS
MPN
AOD4189
LCSC Part #
C485685
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET P-CH 40V 40A TO-252(DPAK)
DatasheetAOS AOD4189
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAOS
PackagingTO-252(DPAK)
Output Capacitance(Coss)185pF
Ciss-Input Capacitance1.87nF
Pd - Power Dissipation62.5W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage40V
Current - Continuous Drain(Id)40A
Reverse Transfer Capacitance (Crss)155pF
RDS(on)22mΩ
Number1 P-Channel
Gate Charge(Qg)41nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))1.7V
TypeP-Channel
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Introduction

AI Translation

The AOD4189 utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. With the superior thermal resistance performance of the DPAK package, this device is ideal for high-current load applications.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = -40V
  • Drain current I<sub>D</sub> = -40A (gate-source voltage V<sub>GS</sub> = -10V)
  • On-resistance R<sub>DS(ON)</sub> < 22mΩ (gate-source voltage V<sub>GS</sub> = -10V)
  • On-resistance R<sub>DS(ON)</sub> < 29mΩ (gate-source voltage V<sub>GS</sub> = -4.5V)
  • 100% tested for unclamped inductive switching (UIS)!
  • 100% tested for gate resistance R<sub>g</sub>!