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AOS AOD4189RoHS

Manufacturer
MPN
AOD4189
LCSC Part #
C485685
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET P-CH 40V 40A TO-252(DPAK)
Datasheetpdf iconAOS AOD4189
In-Stock: 3,026
3,026 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3416$ 0.3382$ 0.34
10+$ 0.3026$ 0.2996$ 3.00
30+$ 0.2847$ 0.2819$ 8.46
100+$ 0.2635$ 0.2609$ 26.09
500+$ 0.218$ 0.2159$ 107.95
1,000+$ 0.2115$ 0.2094$ 209.40
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAOS
PackagingTO-252(DPAK)
Drain to Source Voltage40V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)155pF
RDS(on)22mΩ
Number1 P-Channel
Input Capacitance(Ciss)1.87nF
Gate Charge(Qg)41nC@10V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The AOD4189 utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. With the superior thermal resistance performance of the DPAK package, this device is ideal for high-current load applications.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = -40V
  • Drain current I<sub>D</sub> = -40A (gate-source voltage V<sub>GS</sub> = -10V)
  • On-resistance R<sub>DS(ON)</sub> < 22mΩ (gate-source voltage V<sub>GS</sub> = -10V)
  • On-resistance R<sub>DS(ON)</sub> < 29mΩ (gate-source voltage V<sub>GS</sub> = -4.5V)
  • 100% tested for unclamped inductive switching (UIS)!
  • 100% tested for gate resistance R<sub>g</sub>!