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SPTECH MJ11033

Manufacturer
SPTECHAsian Brands
MPN
MJ11033
LCSC Part #
C480236
Packaging
TO-3
Customer #
Key Attributes
Silicon PNP Darlington Power Transistor
DatasheetSPTECH MJ11033
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 26
26 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 6.7782$ 6.4393$ 6.44
10+$ 5.9555$ 5.6578$ 56.58
25+$ 5.4556$ 5.1829$ 129.57
100+$ 5.0361$ 4.7843$ 478.43
Standard Packaging25/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerSPTECH
PackagingTO-3
Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff2A
Operating Temperature-55℃~+200℃
Vbe On(VBE(on))-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO120V
DC Current Gain1000;400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300W
Current - Collector(Ic)50A
typePNP
Vce Saturation(VCE(sat))3.5V
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Introduction

AI Translation
  • Collector-emitter breakdown voltage: V(BR)CEO = -120V (min)
  • High DC current gain: hFE = 1000 (min) at IC = -25A; hFE = 400 (min) at IC = -50A
  • Complementary to NPN type MJ11032

Applications

AI Translation
  • Designed as output devices in complementary general-purpose amplifier applications.